Date: 4 March 2009
Sematech and AGC will collaborate at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany on methods for improving extreme UV (EUV) mask blank yield to accelerate commercial manufacturing readiness. In this latest move toward enabling critical infrastructure for EUV lithography, a team of engineers from AGC has been assigned to Sematech’s EUV Mask Blank Development Center at CNSE’s Albany NanoTech with the goal of reducing defect levels to the 0.003 defects/cm² at the printable defect size, which is required for manufacturing success.
Mask blanks are the starting material used to make the finished mask that contains the device pattern for the lithographic process. Producing defect-free mask blanks in the quantities required for high-volume manufacturing is a key technical challenge that must be solved to prepare EUV lithography for cost-effective insertion at the 22nm half-pitch generation and below.
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